ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,787, issued on Oct. 6, was assigned to Yield Microelectronics Corp. (Zhubei City, Taiwan). "Low-power programmable erasable nonvolatile memo... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,788, issued on Oct. 6, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Address fault detection in a memory system" was ... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,789, issued on Oct. 6, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Control gate signal for data retention in nonvolatile ... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,790, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor memory devices with die... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,791, issued on Oct. 6, was assigned to Micron Technology Inc. (Boise, Idaho). "Re-driving data to a sub-block during programming of multiple... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,792, issued on Oct. 6, was assigned to Micron Technology Inc. (Boise, Idaho). "Using non-segregated cells as drain-side select gates for sub... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,793, issued on Oct. 6, was assigned to Microchip Technology Inc. (Chandler, Ariz.). "Memory array and methods of operation" was invented by ... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,794, issued on Oct. 6, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Architecture and method for NAND memory operati... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,795, issued on Oct. 6, was assigned to Micron Technology Inc. (Boise, Idaho). "Sense voltage adjustment among multiple erase blocks" was inv... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,796, issued on Oct. 6, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Erase method for memory device and memory device"... Read More